AlGaAs/GaAs heterojunction bipolar transistor circuits with improved high-speed performance

Author

Chang, M.F. ; Asbeck, P.M. ; Wang, K.C. ; Sullivan, G.J. ; Miller, Douglas L.

Author_Institution

Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA

Volume

22

Issue

22

fYear

1986

Firstpage

1173

Lastpage

1174

Abstract

Using a self-aligned base contact process and proton implantation to reduce extrinsic base-collector capacitance, we have improved the high-speed performance of AlGaAs/ GaAs heterojunction bipolar transistor digital circuits. The cutoff frequency of the transistor fT with an emitter width of 2.0 Â¿m is 45 GHz. NTL ring oscillators have operated at 16.5 ps/gate and CML ring oscillators at 27.6 ps/gate. Frequency dividers (1/4) have operated up to 11 GHz with wafer-probe testing These are record speeds for bipolar circuits.

Keywords

III-V semiconductors; aluminium compounds; bipolar integrated circuits; digital integrated circuits; gallium arsenide; 11 GHz; 16.5 ps; 2 micron; 45 GHz; AlGaAs-GaAs heterojunction bipolar transistor circuits; CML ring oscillators; NTL ring oscillators; cutoff frequency; emitter width; extrinsic base-collector capacitance; frequency dividers; high-speed performance; proton implantation; self-aligned base contact process; wafer-probe testing;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860803

Filename

4257020