Comparative Study on Drive Current of III–V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation

Recently, a variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of n-channel MOSFETs. In this paper, we performed a quantum-corrected Monte Carlo device simulation to examine advantages of new channel materials such as III-V compound semiconductors and Ge, by considering scattering effects, quantum mechanical effects, and new device structure. Then, we found that all materials converge to the similar current level as the channel length decreases, but Ge-MOSFET with (111) surface orientation and InP-MOSFET provide higher drive current than the other materials under the quasi-ballistic transport. Furthermore, we demonstrated that the reduction of parasitic resistance in source and drain regions will be indispensable to maintain a definite advantage of III-V materials.