Avalanche breakdown of diffused silicon p-n junctions

Using impact ionization rates of Moll et al. [23] and Lee et al. [24], the avalanche breakdown voltages of diffused silicon p-n junctions were calculated by assuming an error function diffused impurity distribution. The theoretical results were verified experimentally with samples having breakdown voltages ranging from 100 volts to 9000 volts. Good agreement was found between the experimental breakdown voltages and those calculated with the data of Moll et al. This was seen even at high breakdown voltages where the ionizing fields were far lower than those for which ionization rates have been quoted.