DocumentCode :
1027506
Title :
Mössbauer study of implanted garnet films after plasma exposure
Author :
Zhou, X.Z. ; Morrish, A.H. ; Betsui, K.
Author_Institution :
University of Manitoba, Winnipeg, Canada
Volume :
23
Issue :
5
fYear :
1987
fDate :
9/1/1987 12:00:00 AM
Firstpage :
2335
Lastpage :
2337
Abstract :
Single crystal garnet films of composition (YSmCaLu)3(FeGe)5O12were implanted with 175 keV Ne+ions with a dose of 2 × 1014Ne+/cm2and then exposed to an argon plasma. Conversion-electron Mössbauer spectroscopy (CEMS) showed that some changes occurred in the implanted layer. In particular, the average hyperfine fields were slightly increased and the hyperfine-fleld distributions were decreased. Also, ferrous ions on tetrahedral (d) sites produced during the implantation were converted back to ferric ions. In addition, the amount of a paramagnetic phase was reduced. The films were also annealed at temperatures up to 600°C and studied by CEMS. Some possible origins of the plasma-induced changes are suggested.
Keywords :
Garnet films/devices; Ion implantation; Magnetic bubble device fabrication; Mossbauer spectroscopy; Plasma applications, materials processing; Absorption; Annealing; Argon; Garnet films; Iron; Laboratories; Magnetic field measurement; Magnetization; Paramagnetic materials; Plasma temperature;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1987.1065318
Filename :
1065318
Link To Document :
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