• DocumentCode
    1027662
  • Title

    Injection-locking of a wide-stripe AlGaAs/GaAs GRIN-SCH SQW laser

  • Author

    Leopold, M.M. ; Podgornik, R.G. ; Williams, R.A.

  • Author_Institution
    McDonnell Douglas Astronautics Company, Electro-optics Technology Group, St. Louis, USA
  • Volume
    22
  • Issue
    23
  • fYear
    1986
  • Firstpage
    1224
  • Lastpage
    1225
  • Abstract
    A GRIN-SCH SQW laser with a 60 ¿m-wide stripe emitting 24mW per facet has been injection-locked with greater than 20dB suppression of the free-running axial modes of the cavity. The frequency of the injected signal was separated from the edge of the envelope of the free-running frequencies by 10 Å.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; gradient index optics; laser mode locking; semiconductor junction lasers; AlGaAs-GaAs; GRIN-SCH SQW laser; axial mode suppression; injected signal frequency; injection locking; semiconductor laser; wide-stripe;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860839
  • Filename
    4257058