DocumentCode :
1027690
Title :
Ion implantation as a production technique
Author :
Burrill, J.T. ; King, W.J. ; Harrison, S. ; McNally, P.
Author_Institution :
Ion Physics Corporation, Burlington, Mass.
Volume :
14
Issue :
1
fYear :
1967
fDate :
1/1/1967 12:00:00 AM
Firstpage :
10
Lastpage :
17
Abstract :
This paper discusses the development of ion implantation techniques for the production of high efficiency n-on-p silicon solar cells. Although the process is still being optimized, ion-implanted cells are already competitive with diffusion produced cells, with air mass zero (AMO) efficiencies of 11 percent having been achieved. A high-current production machine capable of producing 10 000 cells/week has been constructed and is being applied to further cell development. The process has been applied to dendritic material with AMO efficiencies of > 9.3 percent having been achieved. Using an ion beam high-vacuum sputtering process, cells have been fabricated with 1 mil fused SiO2integral cover slips and AMO efficiencies of > 10 percent.
Keywords :
Aerospace materials; Fabrication; Ion beams; Ion implantation; Photovoltaic cells; Physics; Production; Silicon; Sputtering; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15887
Filename :
1474610
Link To Document :
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