DocumentCode :
1027726
Title :
Temperature dependence of resonant frequency in optically excited diaphragms
Author :
Thornton, K.E.B. ; Uttamchandani, Deepak ; Culshaw, Brian
Author_Institution :
University of Strathclyde, Department of Electronic & Electrical Engineering, Glasgow, UK
Volume :
22
Issue :
23
fYear :
1986
Firstpage :
1232
Lastpage :
1234
Abstract :
Silicon diaphragms of 4 ¿m thickness, fabricated by anisotropic etching techniques, are coated with a thin layer of aluminium. An intensity-modulated laser beam focused on the diaphragm generates transverse vibrations which are detected interferometrically. The measured deflections, resonant frequencies and temperature dependence of resonant frequencies are reported.
Keywords :
aluminium; elemental semiconductors; laser beam effects; light interferometry; piezoelectric oscillations; piezoelectric transducers; pressure transducers; radiation pressure; silicon; Si-Al diaphragm; anisotropic etching; deflections; intensity-modulated laser beam; interferometric detection; optically excited diaphragms; piezoelectric sensor; resonant frequency; temperature dependence; transverse vibrations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860845
Filename :
4257064
Link To Document :
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