DocumentCode :
1027778
Title :
Electron drift velocity in avalanching silicon diodes
Author :
Duh, C.Y. ; Moll, J.L.
Author_Institution :
Stanford University, Stanford, Calif.
Volume :
14
Issue :
1
fYear :
1967
fDate :
1/1/1967 12:00:00 AM
Firstpage :
46
Lastpage :
49
Abstract :
The differential resistance of an avalanching p+nn+junction is used to obtain the electron drift velocity at electric fields where significant avalanching is occurring (2 × 105< E < 4 × 105V/cm). The velocity is also obtained as a function of temperature and is consistent with energetic phonon scattering.
Keywords :
Artificial intelligence; Charge carrier processes; Diodes; Electric resistance; Electron mobility; Equations; Ionization; Silicon; Space charge; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15895
Filename :
1474618
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1027778
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