Title :
GaAs/AlGaAs directional coupler switch with submillimetre device length
Author :
Takeuchi, H. ; Nagata, Kazuyuki ; Kawaguchi, Hitoshi ; Oe, Katsutoshi
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
A GaAs/AlGaAs directional coupler switch, for the first time with a device length shorter than 1 mm, has been fabricated by utilising the good controllability of molecular beam epitaxy and reactive ion beam etching. The switching voltage is as low as 5V. The extinction ratio is 17dB for a crossover state and 14dB for a straight-through state.
Keywords :
III-V semiconductors; aluminium compounds; directional couplers; electro-optical devices; gallium arsenide; molecular beam epitaxial growth; optical communication equipment; optical couplers; sputter etching; switches; 5 V; GaAs-AlGaAs; III-V semiconductors; MBE; RIE; directional coupler switch; electro-optical devices; molecular beam epitaxy; optical communication equipment; optical waveguide components; reactive ion beam etching; submillimetre device length;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860851
