Title :
Production of silicon oxides from glow discharge decomposition of silane and nitric oxide
Author :
Eagle, D.J. ; Milne, W.I.
Author_Institution :
University of Cambridge, Engineering Department, Cambridge, UK
Abstract :
Films of silicon oxide have been produced by PECVD from NO + SiH4 mixtures. The results indicate that the film properties are less dependent on deposition conditions than when the more usual N2O + SiH4 mixtures are used. The films produced have a high resistivity and good interfacial properties with silicon, but are fairly porous with a relatively high etch rate in p-etch.
Keywords :
chemical vapour deposition; dielectric thin films; electronic conduction in insulating thin films; plasma deposited coatings; silicon compounds; CVD; NO-SiH4; SiO2; dielectric thin films; electrical properties; glow discharge decomposition; high etch rate; high resistivity; interfacial properties; p-etch; plasma enhanced chemical vapour deposition; porous;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860852
