Theoretical study of a Gunn diode in a resonant circuit

Author

Copeland, John A.

Author_Institution

Bell Telephone Laboratories, Inc., Murray Hill, N. J.

Volume

Issue

fYear

1967

fDate

2/1/1967 12:00:00 AM

Firstpage

Lastpage

Abstract

A computer simulation of a GaAs Gunn diode in a parallel resonant circuit has been made to determine the optimum device and circuit parameters. The maximum dc to RF efficiency, 5 to 8 percent, is obtained when the product of doping and length is between 10¹²and 2 × 10¹²cm^-2, the product of frequency and length is 10⁷cm/s, and the bias voltage divided by length is 8000 V/cm for a load resistance of $30 R_{0}$ where R0is the low-voltage resistance of the diode. The product of output power and load resistance varies with frequency $f$ as $C f^{2}$ where $C$ is 12,000 watt-ohm-GHz²for a load resistance of $50 R_{0}$ . The frequency can be varied over an octave tuning range by the resonant circuit.

Keywords

Computer simulation; Diodes; Doping; Frequency conversion; Gallium arsenide; Gunn devices; Power generation; RLC circuits; Radio frequency; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1967.15898

Filename

1474621

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1027802