DocumentCode :
1027802
Title :
Theoretical study of a Gunn diode in a resonant circuit
Author :
Copeland, John A.
Author_Institution :
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume :
14
Issue :
2
fYear :
1967
fDate :
2/1/1967 12:00:00 AM
Firstpage :
55
Lastpage :
58
Abstract :
A computer simulation of a GaAs Gunn diode in a parallel resonant circuit has been made to determine the optimum device and circuit parameters. The maximum dc to RF efficiency, 5 to 8 percent, is obtained when the product of doping and length is between 1012and 2 × 1012cm-2, the product of frequency and length is 107cm/s, and the bias voltage divided by length is 8000 V/cm for a load resistance of 
where R0 is the low-voltage resistance of the diode. The product of output power and load resistance varies with frequency 
as 
where 
is 12,000 watt-ohm-GHz2for a load resistance of 
. The frequency can be varied over an octave tuning range by the resonant circuit.
where R as where is 12,000 watt-ohm-GHz2for a load resistance of . The frequency can be varied over an octave tuning range by the resonant circuit.Keywords :
Computer simulation; Diodes; Doping; Frequency conversion; Gallium arsenide; Gunn devices; Power generation; RLC circuits; Radio frequency; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15898
Filename :
1474621
Link To Document :
