Title :
Circuit aspects of transistor parametric frequency doublers
Author_Institution :
178 Grove Lane, Cheadle Hume, Cheshire, England
fDate :
2/1/1967 12:00:00 AM
Abstract :
Factors determining the performance of a transistor parametric frequency doubler are considered from the transistor equivalent network viewpoint, emphasising the integral nature of the active and parametric regions. On the basis of a simple transistor model connected as a frequency doubler, it is shown that a higher loading of the harmonic circuit is required than for a conventional varactor multiplier. By use of circuit models which incorporate parasitics inherent in a high-power, high-frequency planar transistor structure, it is shown that more efficient pumping of the varactor region is possible than would be predicted from the standard equivalent circuit models.
Keywords :
Capacitance; Circuits; Frequency conversion; Impedance; Microwave transistors; Physics; Power harmonic filters; Predictive models; Silicon; Varactors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.15904