Title :
Very low loss extended cavity GaAs/AlGaAs lasers made by impurity-free vacancy diffusion
Author :
Gontijo, I. ; Krauss, T. ; De La Rue, Richard M. ; Roberts, Jeffrey S. ; Marsh, John H.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
fDate :
1/20/1994 12:00:00 AM
Abstract :
Very low loss extended cavity lasers have been fabricated using the impurity-free vacancy diffusion technique. The average loss, obtained from the slope of measured loss as a function of the extended cavity length, was 10 dB/cn for extended cavities annealed at 900 degrees C for 30 s. The lowest loss of 3.6 dB/cm was obtained from a device annealed at 950 degrees C for 30 s.
Keywords :
III-V semiconductors; aluminium compounds; chemical interdiffusion; gallium arsenide; laser cavity resonators; optical losses; optical workshop techniques; rapid thermal processing; semiconductor lasers; 30 s; 900 C; 950 C; DQW laser structure; GaAs-AlGaAs; GaAs/AlGaAs lasers; RTA; annealing; extended cavity lasers; impurity-free vacancy diffusion; pulsed L-I characteristics; rib waveguide lasers; threshold current; very low loss lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940073
