Title :
Lifetime extension of uncoated AlGaAs single quantum well lasers by high power burn-in in inert atmospheres
Author :
Tang, W.C. ; Rosen, H.J. ; Webb, David J. ; Vettiger, P.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
fDate :
1/20/1994 12:00:00 AM
Abstract :
The facet temperature rise of uncoated AlGaAs single-quantum-well lasers as a function of time at constant current is observed to be higher when operated in air than in inert atmospheres such as helium and nitrogen. What is unexpected is that the process of burning-in uncoated AlGaAs lasers at high output power in inert atmospheres for a short time is shown to improve their subsequent operational lifetime and reliability in air. Lifetime extension of these uncoated AlGaAs single quantum well lasers by a factor as high as 750 has been observed.
Keywords :
III-V semiconductors; aluminium compounds; environmental testing; gallium arsenide; life testing; reliability; semiconductor device testing; semiconductor lasers; AlGaAs; He; He environment; N2; N2 environment; facet temperature rise; high power burn-in; inert atmospheres; lifetime extension; operational lifetime; reliability; uncoated AlGaAs single quantum well lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940097