DocumentCode :
1027935
Title :
Lifetime extension of uncoated AlGaAs single quantum well lasers by high power burn-in in inert atmospheres
Author :
Tang, W.C. ; Rosen, H.J. ; Webb, David J. ; Vettiger, P.
Author_Institution :
IBM Almaden Res. Center, San Jose, CA, USA
Volume :
30
Issue :
2
fYear :
1994
fDate :
1/20/1994 12:00:00 AM
Firstpage :
143
Lastpage :
145
Abstract :
The facet temperature rise of uncoated AlGaAs single-quantum-well lasers as a function of time at constant current is observed to be higher when operated in air than in inert atmospheres such as helium and nitrogen. What is unexpected is that the process of burning-in uncoated AlGaAs lasers at high output power in inert atmospheres for a short time is shown to improve their subsequent operational lifetime and reliability in air. Lifetime extension of these uncoated AlGaAs single quantum well lasers by a factor as high as 750 has been observed.
Keywords :
III-V semiconductors; aluminium compounds; environmental testing; gallium arsenide; life testing; reliability; semiconductor device testing; semiconductor lasers; AlGaAs; He; He environment; N2; N2 environment; facet temperature rise; high power burn-in; inert atmospheres; lifetime extension; operational lifetime; reliability; uncoated AlGaAs single quantum well lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19940097
Filename :
265296
Link To Document :
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