DocumentCode
1027960
Title
Indium tin oxide/GaAs photodiodes for millimetric-wave applications
Author
Parker, D.G. ; Say, P.G.
Author_Institution
GEC Research Limited, Hirst Research Centre, Wembley, UK
Volume
22
Issue
23
fYear
1986
Firstpage
1266
Lastpage
1267
Abstract
In the letter we describe improved ITO/GaAs photodiodes for very high-speed applications. For the first time a GaAs device is reported which combines a millimetric wavelength response with a ¿3dB bandwidth of ¿ 50 GHz (10 ps FWHM), with a high quantum efficiency in excess of 30% at 820 nm.
Keywords
III-V semiconductors; Schottky-barrier diodes; antireflection coatings; gallium arsenide; indium compounds; optical communication equipment; photodiodes; tin compounds; 50 GHz; 820 nm; III-V semiconductor; ITO-GaAs; InSnO-GaAs; Schottky contact; antireflection coating; millimetric wavelength response; optical communication equipment; very high-speed applications;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860867
Filename
4257086
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