DocumentCode
1027969
Title
Very high speed operation of planar InGaAs/InP photodiode detectors
Author
Temkin, H. ; Frahm, R.E. ; Olsson, N.A. ; Burrus, C.A. ; McCoy, R.J.
Author_Institution
AT&T Bell Laboratories, Murray Hill, USA
Volume
22
Issue
23
fYear
1986
Firstpage
1267
Lastpage
1269
Abstract
Planar, diffused, InGaAs/InP PIN detectors have been optimised for high-speed operation. To minimise the junction capacitance the p-n junction diameter was reduced to 25 ¿n, resulting in operating chip capacitance as low as 20 fF. The relationship between the bandwidth and quantum efficiency was investigated by varying the thickness of the n-InGaAs absorbing layer, from 8¿m down to 0.4 ¿m. Using optical heterodyning techniques, a response bandwidth ( ¿3dB) in excess of 20 GHz was demonstrated. The quantum efficiency of the fastest devices is 38% at 1.3 ¿m wavelength.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; 1.3 micron; 20 GHz; 20 fF; 38 percent; III-V semiconductor; InGaAs-InP; PIN detectors; high speed operation; n-type absorbing layer; operating chip capacitance; optical communication equipment; optical heterodyning techniques; photodetectors; photodiode detectors; planar p-i-n devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860868
Filename
4257087
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