Frequency domain (1 kHz-40 GHz) characterisation of thin films for multichip module packaging technology

Author

Liu, W.-T. ; Cochrane, S. ; Wu, Xiao-Mei ; Singh, Praveen Kumar ; Zhang, Xiaobing ; McDonald, John ; Borrego, J.M. ; Lu, T.-M.

Author_Institution

Center for Integrated Electron., Rensselaer Polytech. Inst., Troy, NY, USA

Volume

30

Issue

2

fYear

1994

fDate

1/20/1994 12:00:00 AM

Firstpage

117

Lastpage

118

Abstract

Parallel plate capacitors for the broadband dielectric characterisation of both high (amorphous BaTiO₃ and amorphous TaO_x) and low (parylene) dielectric constant thin films were fabricated at low temperature (<200 degrees C). The dielectric constant and loss tangent were determined through the measurement of C, G and the S parameters of the capacitors. These thin film dielectrics exhibit no dispersion in the frequency range 1 kHz-40 GHz.

Keywords

S-parameters; amorphous state; barium compounds; dielectric losses; dielectric thin films; multichip modules; permittivity; polymer films; tantalum compounds; thin film capacitors; 1 kHz to 40 GHz; 1 kHz-40 GHz; 200 C; BaTiO₃; MCM; S-parameters; TaO; amorphous BaTiO₃; amorphous TaO_x; broadband dielectric characterisation; dielectric constant; dielectric thin films; frequency domain characterisation; high permittivity; loss tangent; low permittivity; multichip module packaging technology; parallel plate capacitors; parylene; thin film dielectrics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19940085

Filename

265311