DocumentCode
1028101
Title
64 Mb bubble memory chip architecture
Author
Toyooka, T. ; Sato, T. ; Takeshita, M. ; Kodama, N. ; Suzuki, R.
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
23
Issue
5
fYear
1987
fDate
9/1/1987 12:00:00 AM
Firstpage
2572
Lastpage
2574
Abstract
A 64 Mb bubble memory chip architecture using 1.4 μm × 1.6 μm cell size ion-implanted tracks and the dual gate with block replicate and swap functions is described. The memory chip is composed of sixteen 4Mb blocks, which have 1160 minor loops with the bit storage of 4097. The one major line-minor loops organization and even-odd structure are used to compose the minor loops and a major line without using bad tracks. A chip carrier with matrix diodes is connected with the memory chip by CCB bonding method to reduce the pin number of the memory module. A new pulse drive method with the matrix connection is proposed to drive 16 blocks in parallel with small number of drive circuits.
Keywords
Magnetic bubble memories; Bonding; Character generation; Conductors; Diodes; Laboratories; Memory architecture; Niobium; Production; Pulse circuits; Tracking loops;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1987.1065371
Filename
1065371
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