DocumentCode :
1028154
Title :
Characteristics of SOI CMOS circuits made in n/n+/n oxidised porous silicon structures
Author :
Barla, Kathy ; Bomchil, G. ; Herino, R. ; Monroy ; Gris, Y.
Author_Institution :
Centre National d´Etudes des Télécommunications, Meylan, France
Volume :
22
Issue :
24
fYear :
1986
Firstpage :
1291
Lastpage :
1293
Abstract :
Porous silicon was formed in the highly doped layer of the n/n+/n structure. After full oxidation of porous silicon, CMOS devices were fabricated in insulated single-crystal silicon islands. Mobilities of 540 cm2/Vs and 180 cm2/Vs are found for N-channel and P-channel transistors with low spread of threshold voltages. Results also indicate very low leakage currents, typically less than 10¿13 A/¿m width. Processed wafers, 100 mm in diameter, are flat without evidence of any warpage.
Keywords :
CMOS integrated circuits; integrated circuit technology; semiconductor technology; SOL CMOS circuits; n/ n+/ n structure; oxidation; porous Si-SiO2;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19860886
Filename :
4257106
Link To Document :
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