Title :
Formation of TiN and TiSi2 by rapid processing using a large-area electron beam
Author :
Du Yuan-Cheng ; Wang Hai ; Jiang Guo-Bao ; Sun Die-Chi ; Yu Zeng-Qui ; Li Fu-Ming
Author_Institution :
Fudan University, Department of Electronic Engineering, Shanghai, China
Abstract :
Rapid nitridation processing of Ti evaporated on Si wafer using a large-area electron beam is described. RBS, SIMS and sheet resistance analyses indicated that TiN and TiSi2 film were formed simultaneously in 20 s, and may be applied as a diffusion barrier for IC fabrications.
Keywords :
electron beam applications; integrated circuit technology; metallisation; titanium compounds; RBS; SIMS; Si wafer; TiN formation; TiSi2 formation; VLSI; diffusion barrier for IC fabrication; large-area electron beam; rapid nitridation processing; rapid processing; sheet resistance analyses; silicides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860887
