• DocumentCode
    1028218
  • Title

    A model of the avalanche photodiode

  • Author

    Biard, James R. ; Shaunfield, W.N., Jr.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Tex.
  • Volume
    14
  • Issue
    5
  • fYear
    1967
  • fDate
    5/1/1967 12:00:00 AM
  • Firstpage
    233
  • Lastpage
    238
  • Abstract
    A general model for the avalanche photodiode is presented. It is shown that the diode consists of four regions: 1) guard ring, 2) uniform avalanche region, 3) high-field absorption region and 4) zero-field absorption region. Expressions are given for the ac quantum efficiency, the dc quantum efficiency, and the transit time cutoff frequency. Material requirements are discussed. Based on an entire detector system, an expression is derived for the signal-to-noise ratio. An example is given with the result that a noise-equivalent power (NEP) of 10-12W/Hz1/2is obtained with an optimum avalanche gain of approximately 23.
  • Keywords
    Absorption; Avalanche photodiodes; Cutoff frequency; Detectors; Electric breakdown; Optical modulation; P-i-n diodes; Semiconductor device noise; Semiconductor diodes; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15936
  • Filename
    1474659
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028218