• DocumentCode
    1028234
  • Title

    Parametric effects in a microwave Read avalanche diode

  • Author

    Fukatsu, Yoshiharu

  • Author_Institution
    Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
  • Volume
    14
  • Issue
    5
  • fYear
    1967
  • fDate
    5/1/1967 12:00:00 AM
  • Firstpage
    251
  • Lastpage
    259
  • Abstract
    The parametric effects in the microwave Read avalanche diode are studied using a simplified one-dimensional model. The signals of frequencies ω1and ω2interact with each via the pumping wave of frequency \\omega _{0} = \\omega _{1} + \\omega _{2} , through the nonlinearity in avalanche. This paper shows the range in which the microwave Read avalanche diode has the parametric negative resistance, some typical values of the impedance matrix elements of the microwave Read avalanche diode, and shows that the small-signal impedance locus of the microwave Read avalanche diode on Smith chart coincides approximately with Kita\´s experimental results.
  • Keywords
    Charge carrier processes; Electron devices; Frequency; Germanium; Impedance; Microwave devices; Photodiodes; Semiconductor diodes; Silicon; Solid state circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15938
  • Filename
    1474661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028234