Title :
Rapid thermal annealing of 200°C mercury implants into InP
Author :
Wilkie, J.H. ; Sealy, B.J.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
Elevated-temperature (200°C) implants of 1014 and 1015 Hg ions cm¿2 at 100keV have been successfully activated by rapid thermal annealing at temperatures of 750¿850°C using a novel dual layer of Si3N4 and AlN as an encapsulant. P-type activity was found for all samples, yielding maximum hole concentrations of approximately HV = 8 × 1017 cm¿3 and mobilities of 100 cm2/Vs. Sheet carrier concentrations were found to increase with temperature for 60s anneals, giving a value of 0.8 eV for the `activation energy¿ of Hg implants in InP. Longer annealing times resulted in a degradation of the encapsulant and a corresponding reduction in electrical properties.
Keywords :
III-V semiconductors; annealing; carrier density; carrier mobility; indium compounds; ion implantation; mercury (metal); 0.8 eV; 100 keV; 200 degC; 70 s; 750 to 850 degC; AlN; InP:Hg; RTA; Si3N4; carrier concentrations; dual layer encapsulant; hole concentrations; mobilities; rapid thermal annealing; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860897
