• DocumentCode
    1028295
  • Title

    Improvement In AlGaAs/GaAs HBT power gains with buried proton-implanted layer

  • Author

    Nakajima, O. ; Nagata, Kazuyuki ; Yamauchi, Yuji ; Ito, H. ; Ishibashi, Takayuki

  • Author_Institution
    NTT Electrical Communications Laboratories, Atsugi, Japan
  • Volume
    22
  • Issue
    25
  • fYear
    1986
  • Firstpage
    1317
  • Lastpage
    1318
  • Abstract
    A new structure for AlGaAs/GaAs heterojunction bipolar transistors (HBTs) that employs a buried proton-implanted external collector layer is proposed. This structure has been successfully used to achieve high-performance HBTs with maximum oscillation frequencies fmax up to 51 GHz for a device with 2 ¿×5 ¿m emitter and 4 ¿m×7 ¿m collector dimensions.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; ion implantation; 51 GHz; AlGaAs-GaAs; buried proton-implanted layer; heterojunction bipolar transistors; oscillation frequencies; power gains;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860903
  • Filename
    4257124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028295