Title :
GaAs HBT wideband matrix distributed and Darlington feedback amplifiers to 24 GHz
Author :
Kobayashi, Kevin W. ; Esfandiari, Reza ; Hafizi, Majid E. ; Streit, Dwight C. ; Oki, Aaron K. ; Tran, Liem T. ; Umemoto, Donald K. ; Kim, Mike E.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fDate :
12/1/1991 12:00:00 AM
Abstract :
The designs and performances of a 2-24 GHz distributed matrix amplifier and 1-20 GHz 2-stage Darlington coupled amplifier based on an advanced HBT MBE profile that increases the bandwidth response of the distributed and Darlington amplifiers by providing lower base-emitter and collector-base capacitances are presented. The matrix amplifier has a 9.5 dB nominal gain and a 3-dB bandwidth to 24 GHz. This result benchmarks the highest bandwidth reported for an HBT distributed amplifier. The input and output VSWRs are less than 1.5:1 and 2.0:1, respectively. The total power consumed is less than 60 mW. The chip size measures 2.5×2.6 mm2. The 2-stage Darlington amplifier has 7 dB gain and 3-dB bandwidth beyond 20 GHz. The input and output VSWRs are less than 1.5:1 and 2.3:1, respectively. This amplifier consumes 380 mW of power and has a chip size of 1.66×1.05 mm2
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; feedback; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; wideband amplifiers; 12 to 24 GHz; 380 mW; 60 mW; 7 dB; Darlington feedback amplifiers; GaAs; HBT; MMIC; SHF; advanced HBT MBE profile; bandwidth response; distributed matrix amplifier; wideband; Bandwidth; Broadband amplifiers; Capacitance; Distributed amplifiers; Feedback; Gain; Gallium arsenide; Heterojunction bipolar transistors; Semiconductor device measurement; Wideband;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
