Title :
High breakdown voltage InGaAs/InAlAs HFET using In0.56Ga0.5P spacer layer
Author :
Scheffer, F. ; Heedt, C. ; Reuter, R. ; Lindner, Andreas ; Liu, Quanwei ; Prost, W. ; Tegude, F.J.
Author_Institution :
Dept. of Solid State Electron., Duisburg Univ., Germany
fDate :
1/20/1994 12:00:00 AM
Abstract :
A highly strained In0.5Ga0.5P spacer is introduced into an HFET grown by MOVPE on InP substrate for the first time. Despite the large lattice mismatch and the group V exchange at the channel-spacer interface the transport data are not affected ( mu H, 300 K=11300 cm2/Vs, ns=2*1012 cm-2). However the large bandgap energy of InGaP results in improved gate leakage, drain-conductance and drain breakdown. At VDS=10 V a voltage gain of nu u>100 is maintained. HFETs with Lg=0.7 mu m exhibit gm=360 mS/mm, ID, max(VDS=6 V)=550 mA/mm and a cutoff frequency fmax of 150 GHz. At VDS=5.5 V an AC output power of 0.6 W/mm is achieved indicating the capability for high power HFET application on InP substrates.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown of solids; energy gap; field effect transistors; gallium arsenide; gallium compounds; indium compounds; power transistors; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.7 micron; 10 V; 150 GHz; 5.5 V; AC output power; HFET; InGaAs-InGaP-InAlAs-InP; InGaAs/InGaP/InAlAs/InP structure; InP; MOVPE; bandgap energy; breakdown voltage; channel-spacer interface; cutoff frequency; drain breakdown; drain-conductance; gate leakage; group V exchange; high power application; lattice mismatch; spacer layer; transport data; voltage gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940083
