Title :
The physical mechanism of the chargistor in terms of minority carrier exclusion and injection
Author :
Shao, Tzu-Fann ; Hunter, Lloyd P.
Author_Institution :
Texas Instruments Incorporated, Dallas, Tex.
fDate :
6/1/1967 12:00:00 AM
Abstract :
The chargistor, invented by Yu [1], is here found to consist of a somewhat different structure. He reported the mechanism of its operation in terms of both minority carrier exclusion and high level injection. Three types of electrical behavior are distinguished. Characteristic curves, potential plots, and transconductance data are given.
Keywords :
Alloying; Breakdown voltage; Conductivity; Germanium; Helium; Immune system; Impedance; Indium; Semiconductor devices; Solids;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.15951
