• DocumentCode
    1028369
  • Title

    The physical mechanism of the chargistor in terms of minority carrier exclusion and injection

  • Author

    Shao, Tzu-Fann ; Hunter, Lloyd P.

  • Author_Institution
    Texas Instruments Incorporated, Dallas, Tex.
  • Volume
    14
  • Issue
    6
  • fYear
    1967
  • fDate
    6/1/1967 12:00:00 AM
  • Firstpage
    306
  • Lastpage
    313
  • Abstract
    The chargistor, invented by Yu [1], is here found to consist of a somewhat different structure. He reported the mechanism of its operation in terms of both minority carrier exclusion and high level injection. Three types of electrical behavior are distinguished. Characteristic curves, potential plots, and transconductance data are given.
  • Keywords
    Alloying; Breakdown voltage; Conductivity; Germanium; Helium; Immune system; Impedance; Indium; Semiconductor devices; Solids;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15951
  • Filename
    1474674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028369