DocumentCode :
1028369
Title :
The physical mechanism of the chargistor in terms of minority carrier exclusion and injection
Author :
Shao, Tzu-Fann ; Hunter, Lloyd P.
Author_Institution :
Texas Instruments Incorporated, Dallas, Tex.
Volume :
14
Issue :
6
fYear :
1967
fDate :
6/1/1967 12:00:00 AM
Firstpage :
306
Lastpage :
313
Abstract :
The chargistor, invented by Yu [1], is here found to consist of a somewhat different structure. He reported the mechanism of its operation in terms of both minority carrier exclusion and high level injection. Three types of electrical behavior are distinguished. Characteristic curves, potential plots, and transconductance data are given.
Keywords :
Alloying; Breakdown voltage; Conductivity; Germanium; Helium; Immune system; Impedance; Indium; Semiconductor devices; Solids;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.15951
Filename :
1474674
Link To Document :
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