• DocumentCode
    1028402
  • Title

    8 Gbit/s return-to-zero modulation of a semiconductor laser by gain-switching

  • Author

    Tucker, Rodney ; Wiesenfeld, J.M. ; Gnauck, A.H. ; Bowers, John E.

  • Author_Institution
    AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
  • Volume
    22
  • Issue
    25
  • fYear
    1986
  • Firstpage
    1329
  • Lastpage
    1331
  • Abstract
    We demonstrate 8 Gbit/s return-to-zero pulse modulation of an InGaAsP constricted mesa laser, using short pulses generated by gain-switching. Pattern effects are minimised by precise control of the bias current.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; semiconductor junction lasers; 8 Gbit/s; InGaAsP constricted mesa laser; bias current; gain-switching; return-to-zero pulse modulation; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860914
  • Filename
    4257136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028402