Title :
Al0.3Ga0.7As/GaAs HEMT´s under optical illumination
Author :
De Salles, Alvaro A. ; Romero, Murilo A.
Author_Institution :
Catholic Univ. of Rio de Janeiro, Brazil
fDate :
12/1/1991 12:00:00 AM
Abstract :
Theoretical and experimental work for the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs under optical illumination is presented. The photoconductive effect increasing the 2-DEG channel electron concentration and photovoltaic effect in the gate junction are considered. Optical tuning of a 2 GHz HEMT oscillator and optical control of the gain of a 2 to 6 GHz HEMT amplifier are presented and potential applications are described
Keywords :
III-V semiconductors; aluminium compounds; electron gas; equivalent circuits; gain control; gallium arsenide; high electron mobility transistors; microwave amplifiers; microwave oscillators; photoconductivity; photovoltaic effects; semiconductor device models; solid-state microwave devices; tuning; variable-frequency oscillators; 2 to 6 GHz; 2-DEG channel electron concentration; Al0.3Ga0.7As-GaAs; DC performance; HEMT amplifier; HEMT oscillator; HEMTs; RF performance; SHF; depletion mode; gate junction; optical gain control; optical illumination; photoconductive effect; photovoltaic effect; Electron optics; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical tuning; Photoconductivity; Photovoltaic effects; Radio frequency; Stimulated emission;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
