• DocumentCode
    1028421
  • Title

    Al0.3Ga0.7As/GaAs HEMT´s under optical illumination

  • Author

    De Salles, Alvaro A. ; Romero, Murilo A.

  • Author_Institution
    Catholic Univ. of Rio de Janeiro, Brazil
  • Volume
    39
  • Issue
    12
  • fYear
    1991
  • fDate
    12/1/1991 12:00:00 AM
  • Firstpage
    2010
  • Lastpage
    2017
  • Abstract
    Theoretical and experimental work for the DC and RF performance of depletion mode Al0.3Ga0.7As/GaAs HEMTs under optical illumination is presented. The photoconductive effect increasing the 2-DEG channel electron concentration and photovoltaic effect in the gate junction are considered. Optical tuning of a 2 GHz HEMT oscillator and optical control of the gain of a 2 to 6 GHz HEMT amplifier are presented and potential applications are described
  • Keywords
    III-V semiconductors; aluminium compounds; electron gas; equivalent circuits; gain control; gallium arsenide; high electron mobility transistors; microwave amplifiers; microwave oscillators; photoconductivity; photovoltaic effects; semiconductor device models; solid-state microwave devices; tuning; variable-frequency oscillators; 2 to 6 GHz; 2-DEG channel electron concentration; Al0.3Ga0.7As-GaAs; DC performance; HEMT amplifier; HEMT oscillator; HEMTs; RF performance; SHF; depletion mode; gate junction; optical gain control; optical illumination; photoconductive effect; photovoltaic effect; Electron optics; Gallium arsenide; HEMTs; Lighting; MODFETs; Optical tuning; Photoconductivity; Photovoltaic effects; Radio frequency; Stimulated emission;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.106540
  • Filename
    106540
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028421