Title :
Evolution of MOS-bipolar power semiconductor technology
Author :
Baliga, B.Jayant
Author_Institution :
General Electric Co., Schenectady, NY, USA
fDate :
4/1/1988 12:00:00 AM
Abstract :
A review of the innovations that have led to the evolution of a power transistor technology based on MOS gate control is provided. This technology offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits. The physics of operation of the two types of devices in this category, power MOSFETs and power MOS-bipolar devices, are described. Trends in process technology and device ratings are analyzed. Based on the superior performance of these devices, it is projected that they will completely displace the power bipolar transistor in the future
Keywords :
insulated gate field effect transistors; power transistors; MOS-bipolar power semiconductor technology; device ratings; gate control; input impedance; low-cost integrated circuits; power transistor technology; process technology; Bipolar transistors; Electronics industry; Integrated circuit technology; MOSFETs; Paper technology; Power electronics; Power transistors; Silicon; Thyristors; Voltage;
Journal_Title :
Proceedings of the IEEE
