DocumentCode
1028488
Title
Evolution of MOS-bipolar power semiconductor technology
Author
Baliga, B.Jayant
Author_Institution
General Electric Co., Schenectady, NY, USA
Volume
76
Issue
4
fYear
1988
fDate
4/1/1988 12:00:00 AM
Firstpage
409
Lastpage
418
Abstract
A review of the innovations that have led to the evolution of a power transistor technology based on MOS gate control is provided. This technology offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits. The physics of operation of the two types of devices in this category, power MOSFETs and power MOS-bipolar devices, are described. Trends in process technology and device ratings are analyzed. Based on the superior performance of these devices, it is projected that they will completely displace the power bipolar transistor in the future
Keywords
insulated gate field effect transistors; power transistors; MOS-bipolar power semiconductor technology; device ratings; gate control; input impedance; low-cost integrated circuits; power transistor technology; process technology; Bipolar transistors; Electronics industry; Integrated circuit technology; MOSFETs; Paper technology; Power electronics; Power transistors; Silicon; Thyristors; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IEEE
Publisher
ieee
ISSN
0018-9219
Type
jour
DOI
10.1109/5.4426
Filename
4426
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