Reverse transient in p-n-p-n triodes

A detailed analysis is presented of the reverse transient in a p-n-p-n triode when a reverse pulse is applied to its gate. Charge analysis as proposed by Baker et al. for p-n-p-n diodes has been extended to cover triodes. Analytical expressions for all phases of the transient consisting of two storage and two fall times have been obtained. Lateral biasing effects due to current flow in the gate have been neglected to simplify the analysis.