Title :
Waveguide-integrated pin photodiode on InP
Author :
Bornholdt, Carsten ; D¿¿ldissen, W. ; Fiedler, Fine ; Kaiser, Rene ; Kowalsky, Wolfgang
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
Abstract :
An InGaAs PIN photodiode was vertically integrated with an inverted optical rib waveguide in InGaAsP. Guided light was transferred to and absorbed by the photodiode at a rate of 0.07dB/¿m. For detectors with sufficient length (>300¿m) a responsivity of 0.81 A/W was achieved at 1.3 ¿m wave-length.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical waveguides; photodiodes; 1.3 micron; III-V semiconductors; InGaAs-InGaAsP-InP; PIN photodiode; integrated optoelectronics; inverted optical rib waveguide; p-i-n diodes; vertical integration;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870002
