Title :
Characterisation of n-channel germanium MOSFET with gate insulator formed by high-pressure thermal oxidation
Author :
Crisman, E.E. ; Lee, J.I. ; Stiles, P.J. ; Gregory, Otto J.
Author_Institution :
Brown University, Department of Physics, Providence, USA
Abstract :
N-channel Ge MOSFETs are fabricated with the use of a double-layer gate oxide consisting of electron beam evaporated SiO2 over a native GeO2 oxide, formed by highpressure thermal oxidation. Interface properties of the MOS structure, determined by capacitance/voltage and mobility measurements, are shown to be suitable for FET devices.
Keywords :
elemental semiconductors; germanium; insulated gate field effect transistors; oxidation; Ge-GeO2-SiO2; MOS structure; MOSFET; N-channel; capacitance/voltage measurements; double-layer gate oxide; electron beam evaporation; gate insulator; high-pressure thermal oxidation; interface properties; mobility measurements; native oxides;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870006
