DocumentCode
1028712
Title
Characterization of bulk negative-resistance diode behavior
Author
Copeland, John A.
Author_Institution
Bell Telephone Laboratories, Inc., Murray Hill, N. J.
Volume
14
Issue
9
fYear
1967
fDate
9/1/1967 12:00:00 AM
Firstpage
461
Lastpage
463
Abstract
Over certain ranges of frequency, bulk negative-resistance diodes can act as amplifiers or as oscillators depending on the doping, length between contacts, and external circuit. This behavior can be divided into four classes: Gunn oscillation, stable amplification, LSA oscillation, and bias-circuit oscillation. The four classes of behavior are discussed generally with references to the more detailed papers within this issue.
Keywords
Circuits; Contact resistance; Diodes; Doping; Equations; Frequency; Gallium arsenide; Gunn devices; Oscillators; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1967.15988
Filename
1474711
Link To Document