• DocumentCode
    1028738
  • Title

    Microwave circuit characteristics of bulk GaAs oscillators

  • Author

    Hanson, Delon C. ; Rowe, J.E.

  • Author_Institution
    Hewlett-Packard Co., Palo Alto, Calif.
  • Volume
    14
  • Issue
    9
  • fYear
    1967
  • fDate
    9/1/1967 12:00:00 AM
  • Firstpage
    469
  • Lastpage
    476
  • Abstract
    The microwave circuit characteristics of bulk GaAs transit-time mode and limited space-charge accumulation (LSA) mode oscillators have been evaluated experimentally and theoretically. Experimental measurements were performed with a waveguide-coaxial microwave circuit having two experimental degrees of freedom in which the circuit radiation impedance at the device contacts was evaluated by a dyadic Green\´s function method. Experiments conducted in three rectangular waveguide circuits at fixed bias voltage have established that the LSA mode frequency tuning range is determined by the magnitude and variation of the circuit series inductive reactance XLrelative to the device low-field resistance R0. At a bias voltage which is twice threshold the tuning range is given by 1/2.4\\leq X_{L}/R_{0}\\leq 2.4 . No fixed, linear equivalent circuit characterizes the LSA mode. Analysis and experimental results indicate that the device impedance of small-signal transit-time mode oscillators changes from a passive parallel RC impedance well below threshold to an impedance just above threshold which can be approximated by a series RLC circuit. The series L and C decrease linearly with transit-time mode harmonic order number.
  • Keywords
    Circuit optimization; Gallium arsenide; Impedance measurement; Microwave circuits; Microwave devices; Microwave measurements; Microwave oscillators; Microwave theory and techniques; Performance evaluation; RLC circuits;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.15990
  • Filename
    1474713