DocumentCode :
1028837
Title :
Gunn effect in CdTe
Author :
Ludwig, Gerald W.
Author_Institution :
General Electric Research and Development Center, Schenectady, N. Y.
Volume :
14
Issue :
9
fYear :
1967
fDate :
9/1/1967 12:00:00 AM
Firstpage :
547
Lastpage :
551
Abstract :
We have been examining the response of n-type CdTe to pulsed electric fields. In our best units, prepared to have a uniform cross section, the current remains ohmic, to good approximation, almost to threshold. Above the threshold field of (13±2) kV/cm well-defined Gunn oscillations are observed with a spike amplitude 35-50 percent of the total current. We estimate a domain drift velocity 
cm/s, a field outside the domain 
kV/cm, and a domain field 
kV/cm. After a few nanoseconds of operation, however, current runaway occurs in units showing the spiking mode of oscillation, presumably because of carrier ionization induced by the moving high-field domains.
cm/s, a field outside the domain kV/cm, and a domain field kV/cm. After a few nanoseconds of operation, however, current runaway occurs in units showing the spiking mode of oscillation, presumably because of carrier ionization induced by the moving high-field domains.Keywords :
Circuits; Conductivity; Effective mass; Electric variables measurement; Electrons; Gallium arsenide; Gunn devices; Indium; Pulse measurements; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1967.16002
Filename :
1474725
Link To Document :
