Title :
Slope angle influence on silicon doping in AlGaAs/GaAs MBE-grown on stepped surface of (100) GaAs substrate
Author :
Nobuhara, H. ; Wada, O. ; Fujii, Teruya
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Formation of a series of lateral p-n junctions has been observed in molecular-beam-epitaxial Si-doped AlGaAs/GaAs grown on a graded-step surface of a (100) GaAs substrate. The lateral p-n junction has been found to be formed in a region where a slope angle ¿ of the graded-step surface changes gradually; the conductivity is n-type for 0° < ¿ < 21° but it converts to p-type for ¿ > 31°. A critical angle in the conductivity reversal has been first observed on a single substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; molecular beam epitaxial growth; semiconductor doping; AlGaAs-GaAs:Si; GaAs; MBE; conductivity reversal; conductivity type; critical angle; graded-step surface; semiconductors; series of lateral p- n junctions; slope angle influence; stepped surface;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870026
