Title :
Soi by wafer bonding with spin-on glass as adhesive
Author :
Yamada, Akimasa ; Kawasaki, T. ; Kawashima, Mitsumasa
Author_Institution :
Sumitomo Metal Mining Co. Ltd., Electronics Materials Laboratory, Tokyo, Japan
Abstract :
Two silicon wafers were bonded together with spin-on glass as the adhesive. Bonding strength depended heavily on the surface treatment. This was also confirmed by IR reflection measurement. A silicon-on-insulator (SOI) structure was achieved by thinning one of the wafers after the bonding. The resultant 5¿m-thick SOI layer was stable at high temperatures and showed no degradation in its electrical characteristics.
Keywords :
semiconductor technology; IR reflection measurement; SOG; SOI by wafer bonding; SOI layer; Si on insulator; electrical characteristics; silicon-on-insulator; spin-on glass as adhesive; stable at high temperatures; surface treatment; wafer thinning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870029
