• DocumentCode
    1028939
  • Title

    High-temperature superconductive devices on sapphire

  • Author

    Liang, Guo-Chun ; Withers, Richard S. ; Cole, Brady F. ; Newman, Nathan

  • Author_Institution
    Conductus Inc., Sunnyvale, CA, USA
  • Volume
    42
  • Issue
    1
  • fYear
    1994
  • fDate
    1/1/1994 12:00:00 AM
  • Firstpage
    34
  • Lastpage
    40
  • Abstract
    The low-loss and uniform dielectric properties of sapphire make it attractive for high-performance microwave devices using high-temperature superconductors. YBa2Cu3O7-δ films have been deposited on oxide-buffered 5-cm-diameter wafers and demonstrated a surface resistance of 0.5 mΩ at 10 GHz and 77 K. Long (9-ns) stripline delay lines have for the first time been produced on these substrates and have a measured insertion loss of 1.5 dB at 6 GHz and 77 K. Design techniques appropriate for the dielectric anisotropy of sapphire are discussed
  • Keywords
    barium compounds; delay lines; high-temperature superconductors; sapphire; strip line components; superconducting microwave devices; superconducting thin films; yttrium compounds; 0.5 mohm; 1.5 dB; 10 GHz; 5 cm; 6 GHz; 77 K; 9 ns; Al2O3; HTSC; SHF; YBCO; YBa2Cu3O7-δ films; YBa2Cu3O7-Al2O3 ; dielectric anisotropy; high-temperature superconductors; insertion loss; low-loss substrate; microwave devices; oxide-buffered wafers; sapphire substrate; stripline delay lines; superconductive devices; uniform dielectric properties; Delay lines; Dielectric devices; Dielectric loss measurement; Dielectric substrates; High temperature superconductors; Stripline; Superconducting films; Superconducting microwave devices; Superconductivity; Surface resistance;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/22.265525
  • Filename
    265525