• DocumentCode
    1028956
  • Title

    Wide-bandwidth and high-power 1.3¿m InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers

  • Author

    Zah, C.E. ; Osinski, J.S. ; Menocal, S.G. ; Tabatabaie, N. ; Lee, T.P. ; Dentai, A.G. ; Burrus, C.A.

  • Author_Institution
    Bell Communications Research, Inc., Red Bank, USA
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    52
  • Lastpage
    53
  • Abstract
    The fabrication and performance of 1.3 ¿m InGaAsP buried crescent lasers with semi-insulating Fe-doped InP current blocking layers grown by MOVPE are reported. A modulation bandwidth above 8.3GHz has been achieved at room temperature without using a mesa-stripe geometry. CW output power up to 30 mW per facet at 20°C and CW operation up to 95°C have been obtained. The semi-insulating InP layer alone is proved to be an effective current blocking layer.
  • Keywords
    III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 30 mW; 8.3 GHz; 95 degC; CW operation; CW output power; InGaAsP buried crescent lasers; InP:Fe current blocking layer; MOVPE; modulation bandwidth above 8.3 GHz; room temperature; semiconductors; semiinsulating InP;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870038
  • Filename
    4257256
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028956