• DocumentCode
    1028971
  • Title

    Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs

  • Author

    Palmateer, L.F. ; Tasker, P.J. ; Itoh, Takayuki ; Brown, A.S. ; Wicks, G.W. ; Eastman, L.F.

  • Author_Institution
    Cornell University, School of Electrical Engineering, and National Research & Resource Facility, for Submicron Structures, Ithaca, USA
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    53
  • Lastpage
    55
  • Abstract
    We report microwave characterisation of nominally 1μm-gate AI0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The AI0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2 μm-gate MODFET.
  • Keywords
    III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 22 GHz; AlInAs-GaInAs-InP; InP; MODFET; SHF; cutoff frequency; extrinsic transconductances; lattice-matched; microwave characterisation; modulation-doped field-effect transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870039
  • Filename
    4257259
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028971