DocumentCode :
1028971
Title :
Microwave characterisation of 1 μm-gate AI0.48In0.52As/Ga0.47In0.53As/InP MODFETs
Author :
Palmateer, L.F. ; Tasker, P.J. ; Itoh, Takayuki ; Brown, A.S. ; Wicks, G.W. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering, and National Research & Resource Facility, for Submicron Structures, Ithaca, USA
Volume :
23
Issue :
1
fYear :
1987
Firstpage :
53
Lastpage :
55
Abstract :
We report microwave characterisation of nominally 1μm-gate AI0.48In0.52As/Ga0.47In0.53As (lattice-matched to InP) modulation-doped field-effect transistors (MODFETs). The AI0.48In0.52As/Ga0.47In0.53As MODFETs have room-temperature extrinsic transconductances as high as 250 mS/mm. A room-temperature unity-current-gain cutoff frequency (fT) of 22 GHz and an fmax of 35 GHz were measured for a 1.2 μm-gate MODFET.
Keywords :
III-V semiconductors; aluminium compounds; high electron mobility transistors; indium compounds; solid-state microwave devices; 1 micron; 22 GHz; AlInAs-GaInAs-InP; InP; MODFET; SHF; cutoff frequency; extrinsic transconductances; lattice-matched; microwave characterisation; modulation-doped field-effect transistors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19870039
Filename :
4257259
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1028971
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