• DocumentCode
    1028972
  • Title

    Electrical performance of GaAs epitaxial Gunn effect oscillators

  • Author

    Murakami, H. ; Sekido, Keiko

  • Volume
    14
  • Issue
    9
  • fYear
    1967
  • fDate
    9/1/1967 12:00:00 AM
  • Firstpage
    611
  • Lastpage
    612
  • Abstract
    CW performance of GaAs epitaxial Gunn effect oscillators in the 3.5 to 53 GHz range is described. The n++-n-n+structure was prepared by means of vapor-phase and liquid-phase epitaxy. The maximum CW output power was 340 mW at 7.7 GHz and 7 mW at 53 GHz, respectively. Results of FM noise measurement at 10 GHz and at 50 GHz are also presented.
  • Keywords
    Diodes; Epitaxial growth; Frequency measurement; Gallium arsenide; Gunn devices; Klystrons; Local oscillators; Microwave oscillators; Noise measurement; Power generation;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1967.16015
  • Filename
    1474738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1028972