Title :
Simple method for measuring hot-electron temperature in GaAs
Author :
Xiao-song, Jiang ; Li-sheng, Yu ; Shu-min, Wang ; Hong-xun, Liu
Author_Institution :
Peking University, Physics Department, Beijing, China
Abstract :
A simple method is proposed to measure the hot-electron temperature, using an Au-GaAs Schottky barrier diode. The obtained temperature of electrons under the electric field of 500V/cm and 1100V/cm are 316K and 336K, respectively, while the samples are kept at room temperature.
Keywords :
III-V semiconductors; Schottky-barrier diodes; gallium arsenide; gold; hot carriers; temperature measurement; 316 K; 336 K; Au-GaAs; Au-GaAs Schottky barrier diode; measurement method; measuring hot-electron temperature; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870040
