• DocumentCode
    1028981
  • Title

    Simple method for measuring hot-electron temperature in GaAs

  • Author

    Xiao-song, Jiang ; Li-sheng, Yu ; Shu-min, Wang ; Hong-xun, Liu

  • Author_Institution
    Peking University, Physics Department, Beijing, China
  • Volume
    23
  • Issue
    1
  • fYear
    1987
  • Firstpage
    55
  • Lastpage
    56
  • Abstract
    A simple method is proposed to measure the hot-electron temperature, using an Au-GaAs Schottky barrier diode. The obtained temperature of electrons under the electric field of 500V/cm and 1100V/cm are 316K and 336K, respectively, while the samples are kept at room temperature.
  • Keywords
    III-V semiconductors; Schottky-barrier diodes; gallium arsenide; gold; hot carriers; temperature measurement; 316 K; 336 K; Au-GaAs; Au-GaAs Schottky barrier diode; measurement method; measuring hot-electron temperature; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870040
  • Filename
    4257262