Title :
Failure modes in silicon avalanche transit-time microwave devices
Author :
Schenck, J.F. ; Midford, T.A.
fDate :
9/1/1967 12:00:00 AM
Abstract :
A type of avalanche diode has been subjected to accelerated life test and to failure analysis. The primary failure mechanism is believed to be a form of second breakdown; no significant progressive degradation was observed.
Keywords :
Copper; Degradation; Diodes; Electric breakdown; Electromagnetic heating; Failure analysis; Life testing; Microwave devices; Partial response channels; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16019
