Title :
Self-aligned AlGaAs/GaAs HBT with InGaAs emitter cap layer
Author :
Nagata, Kazuyuki ; Nakajima, O. ; Nittono, T. ; Ito, H. ; Ishibashi, Takayuki
Author_Institution :
NTT Electrical Communications Laboratories, Atsugi, Japan
Abstract :
A new self-aligned AlGaAs/GaAs HBT with an InGaAs emitter cap layer is presented. This HBT has nonalloyed ohmic contacts to the emitter and base that are formed simultaneously and in a self-aligned manner. The low emitter contact resistance of 1.4×10-7 ¿cm2 and the high transconductance per unit area of 3.3 mS/¿m2 demonstrate the effectiveness of this structure.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; ohmic contacts; semiconductor technology; AlGaAs-GaAs; DC characteristics; InGaAs emitter cap layer; contact resistance; heterojunction bipolar transistors; nonalloyed ohmic contacts; self-aligned AlGaAs/GaAs HBT; transconductance per unit area;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870046
