Title :
Effects of uniaxial stress on silicon avalanche transit-time oscillators
Author :
Midford, T.A. ; Bowers, H.C.
fDate :
9/1/1967 12:00:00 AM
Abstract :
Experiments were performed to determine the effects of uniaxial compressive stress on the threshold current and frequency of silicon microwave avalanche diode oscillators. The presence of gold recombination-generation centers was found to have little influence on the stress sensitivity of these devices. The experimental results are qualitatively related to small-signal oscillator theory.
Keywords :
Compressive stress; Diodes; Etching; Failure analysis; Frequency; Gold; Microwave oscillators; Occupational stress; Silicon; Threshold current;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16020
