• DocumentCode
    1029142
  • Title

    Very high-transconductance heterojunction field-effect transistor (HFET)

  • Author

    Taylor, Graham W. ; Lebby, M.S. ; Chang, T.Y. ; Gnall, R.N. ; Sauer, N. ; Tell, B. ; Simmons, Jay G.

  • Author_Institution
    AT&T Bell Laboratories, Holmdel, USA
  • Volume
    23
  • Issue
    2
  • fYear
    1987
  • Firstpage
    77
  • Lastpage
    79
  • Abstract
    A new form of FET has been demonstrated in the GaAs/AlGaAs material system. Designated the HFET, it has shown a transconductance of 500mS/mm at 300K for a nominal Lg =2¿m and a drain current of 430mA/mm. The conduction occurs in an inversion channel at the heterointerface.
  • Keywords
    III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; semiconductor technology; 2 micron; 300 K; GaAs-AlGaAs; HFET; drain current; heterojunction field-effect transistor; high-transconductance; inversion channel; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870056
  • Filename
    4257306
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029142