Title :
Self-aligned GaAs gate heterojunction SISFET
Author :
Chen, M. ; Schaff, W.J. ; Tasker, P.J. ; Eastman, L.F.
Author_Institution :
Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Phillips Hall, Ithaca, USA
Abstract :
A self-aligned GaAs gate heterojunction enhancement-mode SISFET with a layer structure of n+-GaAs/undoped Al0.5Ga0.5As/undoped GaAs is fabricated and shows a high transconductance and a low threshold voltage. The highest transconductance at both room temperature and at 77 K ever reported on a long-channel GaAs gate SISFET, 197 mS/mm and 313 mS/mm, respectively, is obtained.
Keywords :
III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; p-n heterojunctions; semiconductor-insulator-semiconductor structures; 77 K; GaAs gate; GaAs-AlGaAs-GaAs; enhancement-mode; heterojunction SISFET; layer structure; room temperature; self-aligned; threshold voltage; transconductance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870074
