• DocumentCode
    1029417
  • Title

    New GaAlAs-GaAs surface-emitting laser diodes with lateral pumping structure

  • Author

    Wu, Y.-H. ; Ogura, M. ; Werner, M. ; Wang, S.

  • Author_Institution
    University of California, Department of Electrical Engineering & Computer Sciences and Electronics Research Laboratory, Berkeley, USA
  • Volume
    23
  • Issue
    3
  • fYear
    1987
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    We have fabricated a new GaAlAs/GaAs surface-emitting laser diode with lateral pumping structure. With this structure, the thickness of the active layer can be increased beyond the electron diffusion length, and also both current and light confinement can be incorporated. The lowest threshold current was 180 mA. The far-field pattern shows stable double lobes with an FWHM of 39°. By reducing the size of the mesa, making the wall of the mesa vertical and using the GaAlAs/GaAs quarter-wave stack for the mirror, further improvement can be expected.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; optical pumping; semiconductor junction lasers; 180 mA; FWHM; GaAlAs-GaAs; active layer; electron diffusion length; far-field pattern; lateral pumping structure; light confinement; mesa; quarter-wave stack; stable double lobes; surface-emitting laser diodes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19870087
  • Filename
    4257363
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1029417