Title :
New GaAlAs-GaAs surface-emitting laser diodes with lateral pumping structure
Author :
Wu, Y.-H. ; Ogura, M. ; Werner, M. ; Wang, S.
Author_Institution :
University of California, Department of Electrical Engineering & Computer Sciences and Electronics Research Laboratory, Berkeley, USA
Abstract :
We have fabricated a new GaAlAs/GaAs surface-emitting laser diode with lateral pumping structure. With this structure, the thickness of the active layer can be increased beyond the electron diffusion length, and also both current and light confinement can be incorporated. The lowest threshold current was 180 mA. The far-field pattern shows stable double lobes with an FWHM of 39°. By reducing the size of the mesa, making the wall of the mesa vertical and using the GaAlAs/GaAs quarter-wave stack for the mirror, further improvement can be expected.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical pumping; semiconductor junction lasers; 180 mA; FWHM; GaAlAs-GaAs; active layer; electron diffusion length; far-field pattern; lateral pumping structure; light confinement; mesa; quarter-wave stack; stable double lobes; surface-emitting laser diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19870087
