Title :
The pressure dependence of barrier heights in Ge-GaAs n-n heterojunctions
Author :
Howard, W.E. ; Fowler, A.B. ; McLeod, D.
fDate :
9/1/1967 12:00:00 AM
Keywords :
Contacts; Electric variables measurement; Germanium alloys; Germanium silicon alloys; Hall effect; Heterojunctions; Interface states; P-n junctions; Silicon germanium; Temperature distribution;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1967.16067
